Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD) 3 (OD=octanedionate)

Pure Ru thin films were deposited on Si substrate using Ru ( OD ) 3 (OD = octanedionate) as a new liquid precursor with a newly designed warm wall reactor by metalorganic chemical vapor deposition (MOCVD). Resistivity and film structure were largely dependent on MOCVD process parameters such as depo...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-09, Vol.18 (5), p.2400-2403
Main Authors: Lee, Jung-Hyun, Kim, Joo-Young, Rhee, Shi-Woo, Yang, DooYoung, Kim, Dong-Hyun, Yang, Cheol-Hoon, Han, Young-Ki, Hwang, Chul-Ju
Format: Article
Language:English
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Summary:Pure Ru thin films were deposited on Si substrate using Ru ( OD ) 3 (OD = octanedionate) as a new liquid precursor with a newly designed warm wall reactor by metalorganic chemical vapor deposition (MOCVD). Resistivity and film structure were largely dependent on MOCVD process parameters such as deposition temperature, O 2 /( O 2 +Ar) ratio, and reactor pressure. With the increase of O 2 /( O 2 +Ar ) ratio, minimum resistivity (20 μΩ cm) was obtained and then the resistivity was increased due to the abnormal increase of surface roughness. By modifying the position of a single quartz injector, uniform deposition of Ru thin films on an 8 in. Si wafer could be obtained.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1289693