Novel method for the formation of an aluminum parting layer in the fabrication of field emitter arrays

We proposed a method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the softening point of glass. In contrast to a conventional Spindt-type method, an aluminum layer was successivel...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-05, Vol.19 (3), p.925-928
Main Authors: Kang, Seung-Youl, Jung, Moon Youn, Hwang, Chi-Sun, Cho, Young-Rae, Song, Yoon-Ho, Lee, Sang-Kyun, Lee, Jin Ho, Cho, Kyoung-Ik
Format: Article
Language:English
Subjects:
Aluminum
Dielectric materials
Electrodes
Electromigration
Electron beams
Electron emission
Rapid thermal annealing
Scanning electron microscopy
Silicon wafers
Sputter deposition
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Summary:We proposed a method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the softening point of glass. In contrast to a conventional Spindt-type method, an aluminum layer was successively deposited on gate metal/dielectric layers by the usual sputter method and all the layers including the aluminum layer were etched together for the formation of gate holes. By a rapid thermal annealing process, the aluminum slightly diffused into the gate hole. This reflowed aluminum was used as a parting layer and emitter arrays were easily fabricated.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1350837