Loading…

In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN

X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition syste...

Full description

Saved in:
Bibliographic Details
Published in:Surface science spectra 2000-07, Vol.7 (3), p.167-168
Main Authors: Gall, D., Haasch, R. T., Finnegan, N., Lee, T.-Y., Shin, C.-S., Sammann, E., Greene, J. E., Petrov, I.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c212t-9dfb382b26f40b94bfbabb88d72c468db43fa6ab75c76e7f223f844fa8e86c853
cites
container_end_page 168
container_issue 3
container_start_page 167
container_title Surface science spectra
container_volume 7
creator Gall, D.
Haasch, R. T.
Finnegan, N.
Lee, T.-Y.
Shin, C.-S.
Sammann, E.
Greene, J. E.
Petrov, I.
description X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy (RBS), and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.
doi_str_mv 10.1116/1.1360984
format article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_1360984</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>sss</sourcerecordid><originalsourceid>FETCH-LOGICAL-c212t-9dfb382b26f40b94bfbabb88d72c468db43fa6ab75c76e7f223f844fa8e86c853</originalsourceid><addsrcrecordid>eNqdUNFKwzAULaLgnD74B3lV1pmkTZv6Nsamg1nFbeJbSdJEI11Tkmyyr_FX7VxB8NGXe8-993Au5wTBJYJDhFByg4YoSmBG46OghwiGISUpOW4xJCQkOMlOgzPnPiBEiBLSC75mNXDab8BraNkOPL0bb2QlhbemHoBV5S3balNJ__fE6hKMNm_Sgkm3A4vmBzhhml03MKCsWYOpts6Hz-YTLC2r23_a1OGD9KwCufZWl9LdgoXIB2Cp2_KSH_THNj8PThSrnLzoej9YTSfL8X04f7ybjUfzUGCEfZiVikcUc5yoGPIs5oozziktUyzihJY8jhRLGE-JSBOZKowjReNYMSppIiiJ-sHVQVe0BpyVqmisXjO7KxAs9skWqOiSbbnXB64T2rO9l_-Rt8b-EoumVNE3Lk6Jcg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Gall, D. ; Haasch, R. T. ; Finnegan, N. ; Lee, T.-Y. ; Shin, C.-S. ; Sammann, E. ; Greene, J. E. ; Petrov, I.</creator><creatorcontrib>Gall, D. ; Haasch, R. T. ; Finnegan, N. ; Lee, T.-Y. ; Shin, C.-S. ; Sammann, E. ; Greene, J. E. ; Petrov, I.</creatorcontrib><description>X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy (RBS), and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.</description><identifier>ISSN: 1055-5269</identifier><identifier>EISSN: 1520-8575</identifier><identifier>DOI: 10.1116/1.1360984</identifier><identifier>CODEN: SSSPEN</identifier><language>eng</language><ispartof>Surface science spectra, 2000-07, Vol.7 (3), p.167-168</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c212t-9dfb382b26f40b94bfbabb88d72c468db43fa6ab75c76e7f223f844fa8e86c853</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gall, D.</creatorcontrib><creatorcontrib>Haasch, R. T.</creatorcontrib><creatorcontrib>Finnegan, N.</creatorcontrib><creatorcontrib>Lee, T.-Y.</creatorcontrib><creatorcontrib>Shin, C.-S.</creatorcontrib><creatorcontrib>Sammann, E.</creatorcontrib><creatorcontrib>Greene, J. E.</creatorcontrib><creatorcontrib>Petrov, I.</creatorcontrib><title>In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN</title><title>Surface science spectra</title><description>X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy (RBS), and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.</description><issn>1055-5269</issn><issn>1520-8575</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqdUNFKwzAULaLgnD74B3lV1pmkTZv6Nsamg1nFbeJbSdJEI11Tkmyyr_FX7VxB8NGXe8-993Au5wTBJYJDhFByg4YoSmBG46OghwiGISUpOW4xJCQkOMlOgzPnPiBEiBLSC75mNXDab8BraNkOPL0bb2QlhbemHoBV5S3balNJ__fE6hKMNm_Sgkm3A4vmBzhhml03MKCsWYOpts6Hz-YTLC2r23_a1OGD9KwCufZWl9LdgoXIB2Cp2_KSH_THNj8PThSrnLzoej9YTSfL8X04f7ybjUfzUGCEfZiVikcUc5yoGPIs5oozziktUyzihJY8jhRLGE-JSBOZKowjReNYMSppIiiJ-sHVQVe0BpyVqmisXjO7KxAs9skWqOiSbbnXB64T2rO9l_-Rt8b-EoumVNE3Lk6Jcg</recordid><startdate>200007</startdate><enddate>200007</enddate><creator>Gall, D.</creator><creator>Haasch, R. T.</creator><creator>Finnegan, N.</creator><creator>Lee, T.-Y.</creator><creator>Shin, C.-S.</creator><creator>Sammann, E.</creator><creator>Greene, J. E.</creator><creator>Petrov, I.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200007</creationdate><title>In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN</title><author>Gall, D. ; Haasch, R. T. ; Finnegan, N. ; Lee, T.-Y. ; Shin, C.-S. ; Sammann, E. ; Greene, J. E. ; Petrov, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c212t-9dfb382b26f40b94bfbabb88d72c468db43fa6ab75c76e7f223f844fa8e86c853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gall, D.</creatorcontrib><creatorcontrib>Haasch, R. T.</creatorcontrib><creatorcontrib>Finnegan, N.</creatorcontrib><creatorcontrib>Lee, T.-Y.</creatorcontrib><creatorcontrib>Shin, C.-S.</creatorcontrib><creatorcontrib>Sammann, E.</creatorcontrib><creatorcontrib>Greene, J. E.</creatorcontrib><creatorcontrib>Petrov, I.</creatorcontrib><collection>CrossRef</collection><jtitle>Surface science spectra</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gall, D.</au><au>Haasch, R. T.</au><au>Finnegan, N.</au><au>Lee, T.-Y.</au><au>Shin, C.-S.</au><au>Sammann, E.</au><au>Greene, J. E.</au><au>Petrov, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN</atitle><jtitle>Surface science spectra</jtitle><date>2000-07</date><risdate>2000</risdate><volume>7</volume><issue>3</issue><spage>167</spage><epage>168</epage><pages>167-168</pages><issn>1055-5269</issn><eissn>1520-8575</eissn><coden>SSSPEN</coden><abstract>X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy (RBS), and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.</abstract><doi>10.1116/1.1360984</doi><tpages>2</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1055-5269
ispartof Surface science spectra, 2000-07, Vol.7 (3), p.167-168
issn 1055-5269
1520-8575
language eng
recordid cdi_scitation_primary_10_1116_1_1360984
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T20%3A01%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In%20situ%20X-ray%20Photoelectron,%20Ultraviolet%20Photoelectron,%20and%20Auger%20Electron%20Spectroscopy%20Spectra%20from%20First-Row%20Transition-Metal%20Nitrides:%20ScN,%20TiN,%20VN,%20and%20CrN&rft.jtitle=Surface%20science%20spectra&rft.au=Gall,%20D.&rft.date=2000-07&rft.volume=7&rft.issue=3&rft.spage=167&rft.epage=168&rft.pages=167-168&rft.issn=1055-5269&rft.eissn=1520-8575&rft.coden=SSSPEN&rft_id=info:doi/10.1116/1.1360984&rft_dat=%3Cscitation_cross%3Esss%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c212t-9dfb382b26f40b94bfbabb88d72c468db43fa6ab75c76e7f223f844fa8e86c853%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true