Fabrication of triode diamond field emitter arrays on glass substrate by anisotropic conductive film bonding

Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) were fabricated by microwave plasma chemical vapor deposition and the transfer mold technique. The FEAs were fabricated with various standard integrated circuit technologies and micromachine electromechanical system technologie...

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Bibliographic Details
Main Authors: Lee, Jong Duk, Cho, Euo Sik, Kwon, Sang Jik
Format: Conference Proceeding
Language:English
Subjects:
Anisotropy
Conductive films
Glass bonding
Plasma enhanced chemical vapor deposition
Reactive ion etching
Semiconducting diamonds
Sputter deposition
Substrates
Thermooxidation
Transfer molding
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Summary:Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) were fabricated by microwave plasma chemical vapor deposition and the transfer mold technique. The FEAs were fabricated with various standard integrated circuit technologies and micromachine electromechanical system technologies; thermal oxidation, chemical wet etch, sputtering, and glass-to-metal bonding technique by using anisotropic conductive film (ACF). As a result of ACF bonding, thin flat film type FEAs were simply realized on an indium tin oxide coated glass substrate without the necessity of an additional cathode contact. Fabricated diamond FEAs were electrically characterized in triode configuration and an anode current of 237 nA was obtained at the gate bias of 120 V.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1361039