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Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering

ZnO:Al/(ZaO) films were deposited on quartz substrates by dc magnetron reactive sputtering from a Zn target mixed with Al. The effect of oxygen flow rate, target to substrate distance, substrate temperature, and Al doping content on the structural, electrical and optical properties of ZAO were inves...

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Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2001-05, Vol.19 (3), p.963-970
Main Authors: Chen, M., Pei, Z. L., Wang, X., Sun, C., Wen, L. S.
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cited_by cdi_FETCH-LOGICAL-c395t-38a5cf489c6755745e24e6d2f03d9ab681403ea67d066d40cc9540ada62d38a33
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description ZnO:Al/(ZaO) films were deposited on quartz substrates by dc magnetron reactive sputtering from a Zn target mixed with Al. The effect of oxygen flow rate, target to substrate distance, substrate temperature, and Al doping content on the structural, electrical and optical properties of ZAO were investigated. It was observed that the (002) peak position of all films shifts to lower angle comparable to that of bulk ZnO due to the residual stress change with deposition parameters. X-ray photoemission spectroscopy was introduced to analyze the chemical state of Al on the film surface and the results show Al enrichment. The dependences of electrical properties such as resistivity, carrier concentration and Hall mobility on substrate temperature, and Al doping content were measured. The visible transmittance of above 80% and infrared reflectance of above 80% were obtained. The minimum resistivity is 4.23×10 −4  Ω  cm with the carrier concentration of 9.21×10 20   cm −3 and Hall mobility of 16.0 cm2 v1 s−1. The optical band gap was observed to increase with increasing carrier concentration. The probable mechanisms are discussed.
doi_str_mv 10.1116/1.1368836
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The dependences of electrical properties such as resistivity, carrier concentration and Hall mobility on substrate temperature, and Al doping content were measured. The visible transmittance of above 80% and infrared reflectance of above 80% were obtained. The minimum resistivity is 4.23×10 −4  Ω  cm with the carrier concentration of 9.21×10 20   cm −3 and Hall mobility of 16.0 cm2 v1 s−1. The optical band gap was observed to increase with increasing carrier concentration. 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The dependences of electrical properties such as resistivity, carrier concentration and Hall mobility on substrate temperature, and Al doping content were measured. The visible transmittance of above 80% and infrared reflectance of above 80% were obtained. The minimum resistivity is 4.23×10 −4  Ω  cm with the carrier concentration of 9.21×10 20   cm −3 and Hall mobility of 16.0 cm2 v1 s−1. The optical band gap was observed to increase with increasing carrier concentration. The probable mechanisms are discussed.</abstract><doi>10.1116/1.1368836</doi><tpages>8</tpages></addata></record>
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Aluminum
Carrier concentration
Carrier mobility
Electric conductance
Magnetron sputtering
Quartz
Residual stresses
Semiconductor doping
X ray spectroscopy
Zinc oxide
title Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering
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