Effects of multilayer mask roughness on extreme ultraviolet lithography

Effects of multilayer roughness are explored based on rigorous electromagnetic simulation with TEMPEST and aerial image calculation with SPLAT. The TEMPEST simulation on small roughness features using an average material properties technique is validated by comparison with the simulation using finer...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-01, Vol.20 (1), p.344-349
Main Authors: Deng, Yunfei, Pistor, Tom, Neureuther, Andrew R.
Format: Article
Language:English
Subjects:
Approximation theory
Computer simulation
Electromagnetism
Finite difference method
Masks
Multilayers
Phase shift
Polarization
Reflection
Time domain analysis
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Summary:Effects of multilayer roughness are explored based on rigorous electromagnetic simulation with TEMPEST and aerial image calculation with SPLAT. The TEMPEST simulation on small roughness features using an average material properties technique is validated by comparison with the simulation using finer gridding and approximate analytical methods. Simulations for rms roughness from 0 to 1.4 nm show a reflectivity reduction, a phase shift, and a polarization dependence. Midsize Gaussian defects are shown to be slightly less printable in the presence of roughness. For extreme ultraviolet lithography systems with roughness rms of 0.15 nm, the above effects are very second order.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1447252