Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy

InAs layers, grown on GaAs substrates using molecular beam epitaxy, has been systematically investigated. Through the observation of pyrometer readings, it was found that the transition of both the growth mode and the surface morphology of InAs layers are strongly dependent on the As 4 / In flux rat...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2002-05, Vol.20 (3), p.1128-1131
Main Authors: Nee, Tzer-En, Lin, Ray-Ming, Hsieh, Li-Zen, Chang, Liann-Be
Format: Article
Language:English
Subjects:
Crystal structure
Molecular beam epitaxy
Morphology
Reflection high energy electron diffraction
Semiconducting gallium arsenide
Semiconductor growth
Substrates
Surface structure
Transmission electron microscopy
X ray crystallography
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Summary:InAs layers, grown on GaAs substrates using molecular beam epitaxy, has been systematically investigated. Through the observation of pyrometer readings, it was found that the transition of both the growth mode and the surface morphology of InAs layers are strongly dependent on the As 4 / In flux ratio and the substrate temperature. Cross-sectional transmission electron microscopy images showed that effective reduction in defect density resulting from the InAs/GaAs interface was achieved for InAs layers with a thickness of only 1.5 μm.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1474415