Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-05, Vol.20 (3), p.964-968
Main Authors: Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., Fan, W. J.
Format: Article
Language:English
Subjects:
Annealing
Composition
High temperature effects
Interfaces (materials)
Molecular beam epitaxy
Photoluminescence
Plasmas
Semiconducting gallium compounds
Semiconductor growth
Strain
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high temperature (840 ° C ) and long duration (10 min) results in significant improvements to the PL characteristics of the GaInNAs QWs. The shift of the GaInNAs and GaInAs PL peak wavelength resulting from high-temperature annealing is dependent on the In composition. It is suggested that the dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs with high-In composition are residual-strain-induced GaAs/GaInNAs/GaAs interface interdiffusion, and defect-assisted diffusion-related effects, both of which originate from the growth process.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1477425