Soft x-ray photoemission studies of Hf oxidation

Soft x-ray photoemission spectroscopy has been applied to determine the binding energy shifts and the valance band offset of HfO 2 grown on Hf metal. Charging of oxide films upon x-ray exposure is found to be very severe and special care is taken to eliminate it. Photoemission results show the prese...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.106-109
Main Authors: Suzer, S., Sayan, S., Banaszak Holl, M. M., Garfunkel, E., Hussain, Z., Hamdan, N. M.
Format: Article
Language:English
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Summary:Soft x-ray photoemission spectroscopy has been applied to determine the binding energy shifts and the valance band offset of HfO 2 grown on Hf metal. Charging of oxide films upon x-ray exposure is found to be very severe and special care is taken to eliminate it. Photoemission results show the presence of metallic Hf (from the substrate) with a 4f 7/2 binding energy of 14.22 eV, fully oxidized Hf (from HfO 2 ) with a 4f 7/2 binding energy of 18.16 eV, and at least one clearly defined suboxide peak. The position of the valence band of HfO 2 with respect to the Hf(metal) Fermi level is 4.23 eV.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1525816