Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-05, Vol.21 (3), p.1129-1133
• Main Authors: Chen, Uei-Shin, Lin, Jian-Hong, Hsieh, Wei-Jen, Shih, Pai-Shen, Weng, Ko-Wei, Wang, Da-Yung, Chang, Yee-Shyi, Shih, Han C.
• Format: Article
• Language: English
• ISSN: 0734-211X; 1071-1023; 1520-8567
• DOI: 10.1116/1.1572165

This work attempted to implant a Cu catalyst into a TaN (500 Å)/FSG (1200 Å)/Si assembly using a metal vapor vacuum arc ion implanter. The range of the copper dose was between 5.0×10 15 and 1.0×10 17   cm −2 and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer (SIMS), x-ray diffraction (XRD), and field emission scanning electron microscope (FESEM). The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu(111) preferred orientation. An excellent gap filling in a 0.2-μm-width (AR 7:1) trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 μΩ cm after annealing at 500 °C for 1.5 h under an atmosphere of 10% H 2 –90% N 2 .