Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor

We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage (V DS ) region lower than an onset vo...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-05, Vol.22 (3), p.1523-1525
Main Authors: Jang, Kee-Youn, Sugaya, Takeyoshi, Hahn, Cheol-Koo, Ogura, Mutsuo, Komori, Kazuhiro, Shinoda, Akito, Yonei, Kenji
Format: Article
Language:English
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Summary:We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage (V DS ) region lower than an onset voltage of NDR (V NDR ), and decreased at the V DS larger than the V NDR . This result indicates that the carriers transfer from the QWR level to other quantum levels at the V DS region larger than the V NDR . By numerically solving the two-dimensional single band Schrödinger equation using the finite element method, we confirm that the carrier can transfer from the high mobility QWR layer to the low mobility sidewall quantum wells, which is thought to be a mechanism of the negative differential resistance of the QWR-FETs.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1752911