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Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor
We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage (V DS ) region lower than an onset vo...
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| Published in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-05, Vol.22 (3), p.1523-1525 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c257t-af63903c7d72503a5b6812b95ae4bfc0c22479f0fa0a806384cc8b513d5d44163 |
| container_end_page | 1525 |
| container_issue | 3 |
| container_start_page | 1523 |
| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 22 |
| creator | Jang, Kee-Youn Sugaya, Takeyoshi Hahn, Cheol-Koo Ogura, Mutsuo Komori, Kazuhiro Shinoda, Akito Yonei, Kenji |
| description | We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage
(V
DS
)
region lower than an onset voltage of NDR
(V
NDR
),
and decreased at the
V
DS
larger than the
V
NDR
.
This result indicates that the carriers transfer from the QWR level to other quantum levels at the
V
DS
region larger than the
V
NDR
.
By numerically solving the two-dimensional single band Schrödinger equation using the finite element method, we confirm that the carrier can transfer from the high mobility QWR layer to the low mobility sidewall quantum wells, which is thought to be a mechanism of the negative differential resistance of the QWR-FETs. |
| doi_str_mv | 10.1116/1.1752911 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1116_1_1752911</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_1752911</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-af63903c7d72503a5b6812b95ae4bfc0c22479f0fa0a806384cc8b513d5d44163</originalsourceid><addsrcrecordid>eNp90M1KAzEUBeAgCtafhW-QrcLU3GQymVmWorVQ0IWCC2HI3ElopE1qklb69lZadCG4OpvvnMUh5ArYEACqWxiCkrwBOCIDkJwVtazUMRkwJcqCA7yekrOU3hljlRRiQN6e5iEHDL5fY3YbQ3Guo8ZsokvZYaLOU01zNB7nRd6uDJ36iR4l-rHWPq-XxaeLhlpnFj011hrMO6x92rVDvCAnVi-SuTzkOXm5v3sePxSzx8l0PJoVyKXKhbaVaJhA1SsumdCyq2rgXSO1KTuLDDkvVWOZ1UzXrBJ1iVh3EkQv-7KESpyT6_0uxpBSNLZdRbfUcdsCa79vaaE93LKzN3ub0GWdXfA_eBPiL2xXvf0P_13-Ajydcfw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Jang, Kee-Youn ; Sugaya, Takeyoshi ; Hahn, Cheol-Koo ; Ogura, Mutsuo ; Komori, Kazuhiro ; Shinoda, Akito ; Yonei, Kenji</creator><creatorcontrib>Jang, Kee-Youn ; Sugaya, Takeyoshi ; Hahn, Cheol-Koo ; Ogura, Mutsuo ; Komori, Kazuhiro ; Shinoda, Akito ; Yonei, Kenji</creatorcontrib><description>We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage
(V
DS
)
region lower than an onset voltage of NDR
(V
NDR
),
and decreased at the
V
DS
larger than the
V
NDR
.
This result indicates that the carriers transfer from the QWR level to other quantum levels at the
V
DS
region larger than the
V
NDR
.
By numerically solving the two-dimensional single band Schrödinger equation using the finite element method, we confirm that the carrier can transfer from the high mobility QWR layer to the low mobility sidewall quantum wells, which is thought to be a mechanism of the negative differential resistance of the QWR-FETs.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1752911</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1523-1525</ispartof><rights>American Vacuum Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c257t-af63903c7d72503a5b6812b95ae4bfc0c22479f0fa0a806384cc8b513d5d44163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Jang, Kee-Youn</creatorcontrib><creatorcontrib>Sugaya, Takeyoshi</creatorcontrib><creatorcontrib>Hahn, Cheol-Koo</creatorcontrib><creatorcontrib>Ogura, Mutsuo</creatorcontrib><creatorcontrib>Komori, Kazuhiro</creatorcontrib><creatorcontrib>Shinoda, Akito</creatorcontrib><creatorcontrib>Yonei, Kenji</creatorcontrib><title>Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage
(V
DS
)
region lower than an onset voltage of NDR
(V
NDR
),
and decreased at the
V
DS
larger than the
V
NDR
.
This result indicates that the carriers transfer from the QWR level to other quantum levels at the
V
DS
region larger than the
V
NDR
.
By numerically solving the two-dimensional single band Schrödinger equation using the finite element method, we confirm that the carrier can transfer from the high mobility QWR layer to the low mobility sidewall quantum wells, which is thought to be a mechanism of the negative differential resistance of the QWR-FETs.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp90M1KAzEUBeAgCtafhW-QrcLU3GQymVmWorVQ0IWCC2HI3ElopE1qklb69lZadCG4OpvvnMUh5ArYEACqWxiCkrwBOCIDkJwVtazUMRkwJcqCA7yekrOU3hljlRRiQN6e5iEHDL5fY3YbQ3Guo8ZsokvZYaLOU01zNB7nRd6uDJ36iR4l-rHWPq-XxaeLhlpnFj011hrMO6x92rVDvCAnVi-SuTzkOXm5v3sePxSzx8l0PJoVyKXKhbaVaJhA1SsumdCyq2rgXSO1KTuLDDkvVWOZ1UzXrBJ1iVh3EkQv-7KESpyT6_0uxpBSNLZdRbfUcdsCa79vaaE93LKzN3ub0GWdXfA_eBPiL2xXvf0P_13-Ajydcfw</recordid><startdate>20040501</startdate><enddate>20040501</enddate><creator>Jang, Kee-Youn</creator><creator>Sugaya, Takeyoshi</creator><creator>Hahn, Cheol-Koo</creator><creator>Ogura, Mutsuo</creator><creator>Komori, Kazuhiro</creator><creator>Shinoda, Akito</creator><creator>Yonei, Kenji</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040501</creationdate><title>Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor</title><author>Jang, Kee-Youn ; Sugaya, Takeyoshi ; Hahn, Cheol-Koo ; Ogura, Mutsuo ; Komori, Kazuhiro ; Shinoda, Akito ; Yonei, Kenji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-af63903c7d72503a5b6812b95ae4bfc0c22479f0fa0a806384cc8b513d5d44163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Jang, Kee-Youn</creatorcontrib><creatorcontrib>Sugaya, Takeyoshi</creatorcontrib><creatorcontrib>Hahn, Cheol-Koo</creatorcontrib><creatorcontrib>Ogura, Mutsuo</creatorcontrib><creatorcontrib>Komori, Kazuhiro</creatorcontrib><creatorcontrib>Shinoda, Akito</creatorcontrib><creatorcontrib>Yonei, Kenji</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Kee-Youn</au><au>Sugaya, Takeyoshi</au><au>Hahn, Cheol-Koo</au><au>Ogura, Mutsuo</au><au>Komori, Kazuhiro</au><au>Shinoda, Akito</au><au>Yonei, Kenji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2004-05-01</date><risdate>2004</risdate><volume>22</volume><issue>3</issue><spage>1523</spage><epage>1525</epage><pages>1523-1525</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>We describe the photoconductive characteristics of a narrow trench-type InGaAs quantum wire field effect transistor (QWR-FET) with a negative differential resistance (NDR). The photoconductive intensity peak of the trench-type QWR was observed at a drain voltage
(V
DS
)
region lower than an onset voltage of NDR
(V
NDR
),
and decreased at the
V
DS
larger than the
V
NDR
.
This result indicates that the carriers transfer from the QWR level to other quantum levels at the
V
DS
region larger than the
V
NDR
.
By numerically solving the two-dimensional single band Schrödinger equation using the finite element method, we confirm that the carrier can transfer from the high mobility QWR layer to the low mobility sidewall quantum wells, which is thought to be a mechanism of the negative differential resistance of the QWR-FETs.</abstract><doi>10.1116/1.1752911</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1523-1525 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
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| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T02%3A55%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoconductive%20characteristics%20in%20a%20trench-type%20InGaAs%20quantum-wire%20field%20effect%20transistor&rft.jtitle=Journal%20of%20Vacuum%20Science%20&%20Technology%20B:%20Microelectronics%20and%20Nanometer%20Structures&rft.au=Jang,%20Kee-Youn&rft.date=2004-05-01&rft.volume=22&rft.issue=3&rft.spage=1523&rft.epage=1525&rft.pages=1523-1525&rft.issn=0734-211X&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.1752911&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_1752911%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c257t-af63903c7d72503a5b6812b95ae4bfc0c22479f0fa0a806384cc8b513d5d44163%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |