High field transport in GaN/AlGaN heterostructures

Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are comparable to those expected from previously published simulations based upon Monte Carlo tech...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-07, Vol.22 (4), p.2045-2050
Main Authors: Barker, J. M., Ferry, D. K., Goodnick, S. M., Koleske, D. D., Allerman, A., Shul, R. J.
Format: Article
Language:English
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Summary:Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are comparable to those expected from previously published simulations based upon Monte Carlo techniques. Several possible mechanisms for the low value of the velocity previously found are discussed, including nonequilibrium phonons and local inhomogeneities in the field.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1775199