Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-09, Vol.22 (5), p.2518-2521
• Main Authors: Tsai, Chia-Lung, Ho, Chih-Wei, Huang, Chun-Yuan, Lee, Feng-Ming, Wu, Meng-Chyi, Wang, Hai-Lin, Ko, Sum-Chien, Ho, Wen-Jeng, Huang, Jet, Deng, J. R.
• Format: Article
• Language: English
• ISSN: 0734-211X; 1520-8567
• DOI: 10.1116/1.1800358

In this article, we report the fabrication and characterization of 650 nm resonant-cavity light-emitting diodes (RCLEDs) with the Ga In P ∕ Al Ga In P multi-quantum-well active layer sandwiched between two Al Ga As ∕ Al As distributed Bragg reflectors. We compare the performance of RCLEDs with different mesa diameters in the characteristics of forward voltage, light output power, external quantum efficiency, emission spectrum, and dynamic response. All the RCLEDs have a low forward voltage of 1.9 – 2.0 V at 20 mA . The RCLED with a window diameter of 120 μ m exhibits the maximum light output power of 0.79 mW at 39 mA , the best external quantum efficiency of 2.8% at 1.2 mA , a peak wavelength of 647 nm , and a full width at half-maximum of 14.5 nm at 50 mA . The RCLED with a 30 μ m diameter shows the maximum 3 dB frequency bandwidth of 240 MHz at a driving current of 40 mA .