Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Programmable metallization cell structure with a device diameter of 2 μ m composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150 nm thick Ag 30 ( Ge 0.3 Te 0.7 ) 70 electrolyte switches at 0.2 V from an “off” state resistance R off...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724
Main Authors: Kim, Cheol-Jung, Yoon, Soon-Gil, Choi, Kyu-Jeong, Ryu, Sang-Ouk, Yoon, Sung-Min, Lee, Nam-Yeal, Yu, Byoung-Gon
Format: Article
Language:English
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Summary:Programmable metallization cell structure with a device diameter of 2 μ m composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150 nm thick Ag 30 ( Ge 0.3 Te 0.7 ) 70 electrolyte switches at 0.2 V from an “off” state resistance R off close to 10 6 Ω to an “on” resistance state R on more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2180260