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Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory
Programmable metallization cell structure with a device diameter of 2 μ m composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150 nm thick Ag 30 ( Ge 0.3 Te 0.7 ) 70 electrolyte switches at 0.2 V from an “off” state resistance R off...
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| Published in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c419t-22cf338561dbf0f41c87c822a5c11a8eb6199caa5f25c913b5f98ce7df630e713 |
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| cites | cdi_FETCH-LOGICAL-c419t-22cf338561dbf0f41c87c822a5c11a8eb6199caa5f25c913b5f98ce7df630e713 |
| container_end_page | 724 |
| container_issue | 2 |
| container_start_page | 721 |
| container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
| container_volume | 24 |
| creator | Kim, Cheol-Jung Yoon, Soon-Gil Choi, Kyu-Jeong Ryu, Sang-Ouk Yoon, Sung-Min Lee, Nam-Yeal Yu, Byoung-Gon |
| description | Programmable metallization cell structure with a device diameter of
2
μ
m
composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a
150
nm
thick
Ag
30
(
Ge
0.3
Te
0.7
)
70
electrolyte switches at
0.2
V
from an “off” state resistance
R
off
close to
10
6
Ω
to an “on” resistance state
R
on
more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films. |
| doi_str_mv | 10.1116/1.2180260 |
| format | article |
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2
μ
m
composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a
150
nm
thick
Ag
30
(
Ge
0.3
Te
0.7
)
70
electrolyte switches at
0.2
V
from an “off” state resistance
R
off
close to
10
6
Ω
to an “on” resistance state
R
on
more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films.</description><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.2180260</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><publisher>American Vacuum Society</publisher><ispartof>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724</ispartof><rights>American Vacuum Society</rights><rights>2006 American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-22cf338561dbf0f41c87c822a5c11a8eb6199caa5f25c913b5f98ce7df630e713</citedby><cites>FETCH-LOGICAL-c419t-22cf338561dbf0f41c87c822a5c11a8eb6199caa5f25c913b5f98ce7df630e713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Cheol-Jung</creatorcontrib><creatorcontrib>Yoon, Soon-Gil</creatorcontrib><creatorcontrib>Choi, Kyu-Jeong</creatorcontrib><creatorcontrib>Ryu, Sang-Ouk</creatorcontrib><creatorcontrib>Yoon, Sung-Min</creatorcontrib><creatorcontrib>Lee, Nam-Yeal</creatorcontrib><creatorcontrib>Yu, Byoung-Gon</creatorcontrib><title>Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>Programmable metallization cell structure with a device diameter of
2
μ
m
composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a
150
nm
thick
Ag
30
(
Ge
0.3
Te
0.7
)
70
electrolyte switches at
0.2
V
from an “off” state resistance
R
off
close to
10
6
Ω
to an “on” resistance state
R
on
more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films.</description><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkM9KAzEQh4MoWKsH3yBXha2ZpPvv4EGKVqHgpZ6XdHZiI7ubksRCPfkOvqFP4moLgqB4mjl8vx8zH2OnIEYAkF3ASEIhZCb22ABSKZIizfL9fhc5JCCkOmRHITwJIbJUqQGzk6X2GiN5-6KjdR13hgfbrMknQcdnryPVfErvr29z4rjUDbpH6mxNPC5tx41t2sCN87xz3do1fUdD3Ouudi3XiBQCb6l1fnPMDoxuAp3s5pA93FzPJ7fJ7H56N7maJTiGMiZSolGqvxrqhRFmDFjkWEipUwTQBS0yKEvUOjUyxRLUIjVlgZTXJlOCclBDdrbtRe9C8GSqlbet9psKRPXpqIJq56hnL7dsQBu_3v8d_imqcqbPn_87_xe8dv4brFa1UR8ap41b</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Kim, Cheol-Jung</creator><creator>Yoon, Soon-Gil</creator><creator>Choi, Kyu-Jeong</creator><creator>Ryu, Sang-Ouk</creator><creator>Yoon, Sung-Min</creator><creator>Lee, Nam-Yeal</creator><creator>Yu, Byoung-Gon</creator><general>American Vacuum Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060301</creationdate><title>Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory</title><author>Kim, Cheol-Jung ; Yoon, Soon-Gil ; Choi, Kyu-Jeong ; Ryu, Sang-Ouk ; Yoon, Sung-Min ; Lee, Nam-Yeal ; Yu, Byoung-Gon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-22cf338561dbf0f41c87c822a5c11a8eb6199caa5f25c913b5f98ce7df630e713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Cheol-Jung</creatorcontrib><creatorcontrib>Yoon, Soon-Gil</creatorcontrib><creatorcontrib>Choi, Kyu-Jeong</creatorcontrib><creatorcontrib>Ryu, Sang-Ouk</creatorcontrib><creatorcontrib>Yoon, Sung-Min</creatorcontrib><creatorcontrib>Lee, Nam-Yeal</creatorcontrib><creatorcontrib>Yu, Byoung-Gon</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Cheol-Jung</au><au>Yoon, Soon-Gil</au><au>Choi, Kyu-Jeong</au><au>Ryu, Sang-Ouk</au><au>Yoon, Sung-Min</au><au>Lee, Nam-Yeal</au><au>Yu, Byoung-Gon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2006-03-01</date><risdate>2006</risdate><volume>24</volume><issue>2</issue><spage>721</spage><epage>724</epage><pages>721-724</pages><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>Programmable metallization cell structure with a device diameter of
2
μ
m
composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a
150
nm
thick
Ag
30
(
Ge
0.3
Te
0.7
)
70
electrolyte switches at
0.2
V
from an “off” state resistance
R
off
close to
10
6
Ω
to an “on” resistance state
R
on
more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.2180260</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1071-1023 |
| ispartof | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724 |
| issn | 1071-1023 1520-8567 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_2180260 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory |
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