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Electrical and emission properties of nanocomposite Si O x ( Si ) and Si O 2 ( Si ) films
The electrical and emission properties of as deposited and annealed Si O x ( Si ) films have been investigated. The films with thicknesses of 10 – 100 nm were obtained by thermal evaporation of silicon powder in vacuum ( 2.7 – 4.0 ) × 10 − 3 Pa on flat Si substrates and Si tip arrays. The atomic for...
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| Published in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.945-949 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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| Summary: | The electrical and emission properties of as deposited and annealed
Si
O
x
(
Si
)
films have been investigated. The films with thicknesses of
10
–
100
nm
were obtained by thermal evaporation of silicon powder in vacuum
(
2.7
–
4.0
)
×
10
−
3
Pa
on flat Si substrates and Si tip arrays. The atomic force microscopy investigations of the surface morphology indicated the presence of nanoprotrusions on surface of the initial
Si
O
x
(
Si
)
films with height up to
20
nm
and curvature radius of the nanoprotrusions about
3
–
5
nm
. As a result of the thermal annealing, the film surface becomes more uniform and its morphology is characterized by nanoprotrusions with height in the range of
1
–
3
nm
. At low electric fields the
I
-
V
characteristics of dark current through the initial
Si
O
x
(
Si
)
films correspond to Poole-Frenkel transport mechanism. The Fowler-Nordheim tunneling dominates at higher electric fields. As to annealed
Si
O
2
(
Si
)
films, the modified Fowler-Nordheim electron tunneling through trapezoidal
Si
O
2
barrier between silicon nanoclusters restricts the current flow. The effective electron field emission from Si tip arrays coated with nanocomposite
Si
O
x
(
Si
)
and
Si
O
2
(
Si
)
films was observed. The results of the electron field emission from surface of
Si
O
x
(
Si
)
films into vacuum show an emission current density of
0.25
×
10
−
5
A
∕
cm
2
at macroscopic electric fields of
(
5
–
6
)
×
10
5
V
∕
cm
. The field emission from thermally annealed samples was not observed in the whole range of the applied voltages. In the contrary, for the case of thermally annealed samples subjected to the following partial etching in
H
F
:
H
2
O
solution, the emission increases in comparison with initial samples. In this case the field emission appears already at an electric field of
1.5
×
10
5
V
∕
cm
and the maximum current density increases up to the value of
∼
3
×
10
−
5
A
∕
cm
2
. The current peaks are revealed on emission
I
(
V
)
characteristics built in
J
(
E
)
coordinates. The models for explanation of peculiarities of the electrical conductivity and electron field emission from nanocomposite films are discussed. |
|---|---|
| ISSN: | 1071-1023 1520-8567 |
| DOI: | 10.1116/1.2183787 |