Influence of Si doping on the performance of quantumdots-in-well photodetectors

The effects of doping on In As ∕ In 0.15 Ga 0.85 As quantum dots-in-well infrared photodetectors have been investigated by measuring the dark current, photocurrent, spectral response, responsivity, and detectivity. The dark current increased monotonically as a function of the doping level in the dot...

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Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1553-1555
Main Authors: Attaluri, R. S., Annamalai, S., Posani, K. T., Stintz, A., Krishna, S.
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Summary:The effects of doping on In As ∕ In 0.15 Ga 0.85 As quantum dots-in-well infrared photodetectors have been investigated by measuring the dark current, photocurrent, spectral response, responsivity, and detectivity. The dark current increased monotonically as a function of the doping level in the dots. The photocurrent too increased with the increase in the doping level. By measuring the background limited infrared photodetector temperature, we find that the optimum sheet doping concentration in these detectors is n = 3 × 10 10 cm − 2 (corresponding to about 1 e ∕ dot ). These results were corroborated by measurement of responsivity and generation-recombination noise limited detectivity of these detectors.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2190676