Fabrication of single-crystalline insulator∕Si∕insulator nanostructures

We study the growth of double-barrier insulator∕Si∕insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of nanostructures with continuous ultrathin single-crystalline silicon buried in a single-crystalline ins...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-07, Vol.24 (4), p.2041-2046
Main Authors: Fissel, A., Kühne, D., Bugiel, E., Osten, H. J.
Format: Article
Language:English
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Summary:We study the growth of double-barrier insulator∕Si∕insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of nanostructures with continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. The approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. As an example, we demonstrate the growth of epitaxial silicon buried in epitaxial Gd 2 O 3 . The incorporation of epitaxial Si islands into single-crystalline Gd 2 O 3 is also demonstrated.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2213266