Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In 0.15 Ga 0.85 As ∕ Ga As quantum wells (QWs). The QD density varied from 1.1 × 10 11 down to 1.3 × 10 10 cm − 2 with an increase in QD growth temperature. Three stages have been reve...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-03, Vol.27 (2), p.919-922
Main Authors: Torchynska, T. V., Velazquez Lozada, E., Casas Espinola, J. L.
Format: Article
Language:English
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Summary:Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In 0.15 Ga 0.85 As ∕ Ga As quantum wells (QWs). The QD density varied from 1.1 × 10 11 down to 1.3 × 10 10 cm − 2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in In Ga As ∕ Ga As QW structures with different InAs QD densities.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3010718