Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-05, Vol.27 (3), p.1655-1657
• Main Authors: Rogers, D. J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Jomard, F., Molinari, M., Troyon, M., McGrouther, D., Chapman, J. N., Razeghi, M., Ougazzaden, A.
• Format: Article
• Language: English
• ISSN: 1071-1023; 1520-8567
• DOI: 10.1116/1.3137967

This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c -sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the Ga N ∕ Zn O interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ∼ 368 nm ( ∼ 3.37 eV ) , which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ∼ 379 nm ( ∼ 3.28 eV ) , which had been observed in RT photoluminescence spectra prior to removal of the ZnO.