Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask

Large-area GaAs nanowires are fabricated using Si O 2 nanoparticles as the etching mask. Si O 2 nanoparticle monolayer is spin coated on the GaAs substrate. To obtain a uniform monolayer of Si O 2 nanoparticles across the substrate, raised temperature, adequate solution concentration, and the substr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2449-2452
Main Authors: Wang, Ding-Shin, Chao, Jiun-Jie, Hung, Shih-Che, Lin, Ching-Fuh
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Large-area GaAs nanowires are fabricated using Si O 2 nanoparticles as the etching mask. Si O 2 nanoparticle monolayer is spin coated on the GaAs substrate. To obtain a uniform monolayer of Si O 2 nanoparticles across the substrate, raised temperature, adequate solution concentration, and the substrate treated with a solvent for interface activation are required. With the monolayer of Si O 2 nanoparticles as the etching mask, the GaAs substrate is etched by induced-coupled plasma reactive ion etcher (ICP-RIE) to form GaAs nanowires with a high aspect ratio. The diameter and length of GaAs nanowires are 70 nm and 1.2 μ m , respectively. The diameter and length of GaAs nanowires can be controlled by the size of Si O 2 nanoparticles and etching time of ICP-RIE.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3265468