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Highly piezoelectric AlN thin films grown on amorphous, insulating substrates
AlN thin films were grown by reactive sputtering on amorphous SiO 2 thin films. Film texture, x-ray rocking curve width, mechanical stress, and the clamped piezoelectric constant d 33 , f were studied as a function of rf bias power and substrate roughness. A high d 33 , f of 5.0 pm/V was achieved at...
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| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-05, Vol.28 (3), p.390-393 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | AlN thin films were grown by reactive sputtering on amorphous
SiO
2
thin films. Film texture, x-ray rocking curve width, mechanical stress, and the clamped piezoelectric constant
d
33
,
f
were studied as a function of rf bias power and substrate roughness. A high
d
33
,
f
of 5.0 pm/V was achieved at low substrate roughness and low mechanical AlN film stress. Increasing substrate roughness and stress leads to a deterioration of
d
33
,
f
, which is correlated with a higher density of opposite polarity grains detected by piezoresponse force microscopy. Extrapolating to 100% uniform polarity, a
d
33
,
f
of 6.1 pm/V is derived as highest possible value, probably corresponding to the
d
33
,
f
=
e
33
/
c
33
E
of perfect single crystalline material. Growth mechanisms are proposed and underlined by high resolution transmission electron microscopy to explain the observed phenomena. |
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| ISSN: | 0734-2101 1520-8559 |
| DOI: | 10.1116/1.3359588 |