Monoclinic textured HfO 2 films on GeO x N y / Ge ( 100 ) stacks using interface reconstruction by controlled thermal processing

The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO 2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of t...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.662-664
Main Authors: Bastos, Karen Paz, Miotti, Leonardo, Lucovsky, Gerald, Chung, Kwun-Bum, Nordlund, Dennis
Format: Article
Language:English
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Summary:The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO 2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of the HfO 2 in the monoclinic structure driven by the Ge(100) substrate. The substrate templating of the HfO 2 crystallization is an evidence that the processing used here removes the undesired the interfacial layer and has the potential to yield interfaces with low density of defects.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.3430563