Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy

p-side-down, single heterostructure n-InGaN/p-GaN light emitting diodes grown by molecular beam epitaxy exhibited stable peak emission wavelengths as long as 550 nm for current densities in excess of 100 A/cm2, and minimal efficiency droop up to 150 A/cm2 without the use of an electron blocking laye...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-01, Vol.31 (1)
Main Authors: Newman, Scott, Gallinat, Chad, Wright, Jonathan, Enck, Ryan, Sampath, Anand, Shen, Hongen, Reed, Meredith, Wraback, Michael
Format: Article
Language:English
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Summary:p-side-down, single heterostructure n-InGaN/p-GaN light emitting diodes grown by molecular beam epitaxy exhibited stable peak emission wavelengths as long as 550 nm for current densities in excess of 100 A/cm2, and minimal efficiency droop up to 150 A/cm2 without the use of an electron blocking layer. This behavior is consistent with the formation of a two-dimensional hole gas in the n-InGaN layer and a higher barrier to electron overflow in the conduction band due to the negative polarization charge at the n-InGaN/p-GaN interface.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4769732