Growth and characterization of GaP/GaNP core/shell nanowires

This paper reports on self-catalyzed vertical GaP nanowires (NWs) and GaP/GaNP core/shell NWs grown on Si(111) by gas-source molecular beam epitaxy. It was found that GaP NWs have a growth window from ∼585 °C to ∼615 °C. The low temperature limit is set by lack of adatom mobility, while the high tem...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3)
Main Authors: Sukrittanon, Supanee, Tu, Charles W.
Format: Article
Language:English
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Summary:This paper reports on self-catalyzed vertical GaP nanowires (NWs) and GaP/GaNP core/shell NWs grown on Si(111) by gas-source molecular beam epitaxy. It was found that GaP NWs have a growth window from ∼585 °C to ∼615 °C. The low temperature limit is set by lack of adatom mobility, while the high temperature limit is set by unattainable supersaturation condition of vapor–liquid–solid growth. In the temperature window, the GaP NW diameter can be tailored by the growth temperature. A comparison of the photoluminescent spectrum between an ensemble GaP/GaNP core/shell NWs and a single NW shows that the broad and nearly identical width of the spectra probably does not originate from the variation of N composition among NWs but from the mechanism of light emission.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4793476