Influences of low-temperature postdeposition annealing on memory properties of Al/Al2O3/Al-rich Al-O/SiO2/p-Si charge trapping flash memory structures

Charge trapping flash (CTF) memory structure was fabricated on a SiO2/p-Si substrate using Al-rich Al-O as a charge trapping layer. Capacitance–voltage curves of the specimen indicated a large memory window width of 4.8 V with a maximum operation voltage of 7 V due to the charge trapping in the Al-r...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-05, Vol.32 (3)
Main Authors: Ozaki, Shinya, Kato, Takashi, Kawae, Takeshi, Morimoto, Akiharu
Format: Article
Language:English
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Summary:Charge trapping flash (CTF) memory structure was fabricated on a SiO2/p-Si substrate using Al-rich Al-O as a charge trapping layer. Capacitance–voltage curves of the specimen indicated a large memory window width of 4.8 V with a maximum operation voltage of 7 V due to the charge trapping in the Al-rich Al-O layer. With N2 postdeposition annealing treatment at 350 °C, charge retention characteristics of the CTF memory structure were drastically improved without any serious loss in charge trap density. Furthermore, the proposed structure showed excellent memory characteristics, such as endurance and stable data retention even at 100 °C.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4876135