Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb

Bulk single crystal and polycrystalline samples of NiSb, MnSb, and NiMnSb have been grown and characterized. The lattice parameter of NiMnSb was found to be 5.945 ± 0.001 Å, around 0.25% larger than previous reports. The surface preparation of these materials was investigated using x-ray photoelectr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2016-07, Vol.34 (4)
Main Authors: Maskery, Ian, Burrows, Christopher W., Walker, Marc, Singh, Ravi P., Balakrishnan, Geetha, Duffy, Jon A., Bell, Gavin R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Bulk single crystal and polycrystalline samples of NiSb, MnSb, and NiMnSb have been grown and characterized. The lattice parameter of NiMnSb was found to be 5.945 ± 0.001 Å, around 0.25% larger than previous reports. The surface preparation of these materials was investigated using x-ray photoelectron spectroscopy. Wet etching with HCl and argon ion sputtering were used in tandem with vacuum annealing. For both binary materials, a clean and stoichiometric surface could be regained by HCl etching and annealing alone. However, clean and stoichiometric ternary NiMnSb was not successfully prepared by these methods. The transition metal 2p and 3p levels are analyzed for all three materials.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4953549