Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

A nearly lattice-matched In0.12Al0.88N/Al0.21Ga0.79N heterostructure field-effect transistor (HFET) was fabricated and its device characteristics were evaluated. The fabricated device showed good pinch-off characteristics with a high breakdown field of 118 V/μm. A simple device calculation based on...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2016-09, Vol.34 (5)
Main Authors: Miyoshi, Makoto, Tsutsumi, Tatsuya, Nishino, Gosuke, Miyachi, Yuta, Okada, Mayuko, Freedsman, Joseph J., Egawa, Takashi
Format: Article
Language:English
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Summary:A nearly lattice-matched In0.12Al0.88N/Al0.21Ga0.79N heterostructure field-effect transistor (HFET) was fabricated and its device characteristics were evaluated. The fabricated device showed good pinch-off characteristics with a high breakdown field of 118 V/μm. A simple device calculation based on the experimental results showed the possibility that a low specific on-resistance below those of conventional AlGaN-channel HFETs can be achieved for InAlN/AlGaN HFETs in the case where a specific contact resistivity is less than 1 × 10−5 Ω cm2.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4961908