Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications

The authors report the compositional dependence of the direct and indirect band gaps of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs with (001) surface orientation determined from deformation potential theory and spectroscopic ellipsometry measurements. The effects of alloying Ge with Si and Sn...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2018-03, Vol.36 (2)
Main Authors: Fernando, Nalin S., Carrasco, Rigo A., Hickey, Ryan, Hart, John, Hazbun, Ramsey, Schoeche, Stefan, Hilfiker, James N., Kolodzey, James, Zollner, Stefan
Format: Article
Language:English
Online Access:Get full text
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Summary:The authors report the compositional dependence of the direct and indirect band gaps of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs with (001) surface orientation determined from deformation potential theory and spectroscopic ellipsometry measurements. The effects of alloying Ge with Si and Sn and the strain dependence of the band gaps at the Γ, Δ, and L conduction band minima are discussed. Deformation potential theory predicts an indirect to direct crossover in pseudomorphic Ge1−y−xSixSny alloys on Ge or GaAs only for very high Sn concentrations between 15% and 20%. No indirect to direct cross-over in pseudomorphic Ge1−ySny alloys (x = 0) on Ge or GaAs was found for practically approachable Sn compositions (y 
ISSN:2166-2746
2166-2754
DOI:10.1116/1.5001948