Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma

A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N 2 gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464
Main Authors: Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.
Format: Article
Language:English
Online Access:Get full text
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Summary:A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N 2 gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute N 2 /Ar mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of N 2 in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.582209