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Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma
A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N 2 gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead...
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| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Online Access: | Get full text |
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| container_end_page | 464 |
| container_issue | 2 |
| container_start_page | 461 |
| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 18 |
| creator | Gotthold, David W. Govindaraju, Sridhar Mattord, Terry Holmes, Archie L. Streetman, Ben G. |
| description | A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the
N
2
gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute
N
2
/Ar
mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of
N
2
in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach. |
| doi_str_mv | 10.1116/1.582209 |
| format | article |
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N
2
gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute
N
2
/Ar
mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of
N
2
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N
2
gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute
N
2
/Ar
mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of
N
2
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N
2
gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute
N
2
/Ar
mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of
N
2
in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach.</abstract><doi>10.1116/1.582209</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_scitation_primary_10_1116_1_582209 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma |
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