Residual gas effects on the emission characteristics of silicon field emitter arrays

Measurements have been performed on the degradation of emission from silicon field emitting devices in ultrahigh vacuum (UHV) and vacuums containing CO 2 and CH 4 with anode potentials of 0 and 2500 V. Degradation is very fast in CO 2 , slower in CH 4 , and very slow in UHV. Analysis of the data usi...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-03, Vol.18 (2), p.948-951
Main Authors: Gilkes, M. J., Nicolaescu, D., Wilshaw, P. R.
Format: Article
Language:English
Subjects:
Anodes
Carbon dioxide
Electric currents
Electric potential
Electron emission
Methane
Semiconducting silicon
Vacuum
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Summary:Measurements have been performed on the degradation of emission from silicon field emitting devices in ultrahigh vacuum (UHV) and vacuums containing CO 2 and CH 4 with anode potentials of 0 and 2500 V. Degradation is very fast in CO 2 , slower in CH 4 , and very slow in UHV. Analysis of the data using a numerical simulation shows that, in UHV, the degradation can be explained by an increase in work function with time. For CO 2 and CH 4 , however, it is primarily due to a blunting of the tips that is partly compensated for by a decrease in work function as emission progresses. There is some evidence for tip sputtering being important in the case of CO 2 at high anode voltages.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.591304