Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Thin film perovskite-type oxide SrTiO 3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO 3 heteroepitaxy on Si substrate with SrTiO 3 (001)//Si(001) and SrTiO 3 [010]//Si[...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-05, Vol.18 (3), p.1653-1657
Main Authors: Yu, Z., Ramdani, J., Curless, J. A., Finder, J. M., Overgaard, C. D., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Conner, J. R., Kaushik, V. S.
Format: Article
Language:English
Subjects:
Dielectric properties
Gates (transistor)
Leakage currents
Molecular beam epitaxy
Perovskite
Reflection high energy electron diffraction
Strontium compounds
Surface roughness
Thin film transistors
X ray crystallography
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Summary:Thin film perovskite-type oxide SrTiO 3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO 3 heteroepitaxy on Si substrate with SrTiO 3 (001)//Si(001) and SrTiO 3 [010]//Si[110] . The SrTiO 3 surface is atomically as smooth as the starting substrate surface, with a root mean square roughness of 1.2 Å observed by atomic force microscopy. The thickness of the amorphous interfacial layer between SrTiO 3 and Si has been engineered to minimize the device short channel effect. An effective oxide thickness
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.591445