Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Thin film perovskite-type oxide SrTiO 3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO 3 heteroepitaxy on Si substrate with SrTiO 3 (001)//Si(001) and SrTiO 3 [010]//Si[...

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Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-05, Vol.18 (3), p.1653-1657
Main Authors: Yu, Z., Ramdani, J., Curless, J. A., Finder, J. M., Overgaard, C. D., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Conner, J. R., Kaushik, V. S.
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Language:English
Subjects:
Dielectric properties
Gates (transistor)
Leakage currents
Molecular beam epitaxy
Perovskite
Reflection high energy electron diffraction
Strontium compounds
Surface roughness
Thin film transistors
X ray crystallography
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cited_by cdi_FETCH-LOGICAL-c325t-ca112ded75d01d5d3e24c06b405ea88fd97c3c2cb5f65561a551ecb40a11ba433
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container_title Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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creator Yu, Z.
Ramdani, J.
Curless, J. A.
Finder, J. M.
Overgaard, C. D.
Droopad, R.
Eisenbeiser, K. W.
Hallmark, J. A.
Ooms, W. J.
Conner, J. R.
Kaushik, V. S.
description Thin film perovskite-type oxide SrTiO 3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO 3 heteroepitaxy on Si substrate with SrTiO 3 (001)//Si(001) and SrTiO 3 [010]//Si[110] . The SrTiO 3 surface is atomically as smooth as the starting substrate surface, with a root mean square roughness of 1.2 Å observed by atomic force microscopy. The thickness of the amorphous interfacial layer between SrTiO 3 and Si has been engineered to minimize the device short channel effect. An effective oxide thickness
doi_str_mv 10.1116/1.591445
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An effective oxide thickness &lt;10 Å has been obtained for a 110 Å thick dielectric film. The interface state density between SrTiO 3 and Si is 6.4×10 10   cm −2  eV −1 , and the inversion layer carrier mobilities are 221 and 62 cm2 V−1 s−1 for n- and p-channel metal–oxide–semiconductor devices with 1.2 μm effective channel length, respectively. 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1520-8567
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Dielectric properties
Gates (transistor)
Leakage currents
Molecular beam epitaxy
Perovskite
Reflection high energy electron diffraction
Strontium compounds
Surface roughness
Thin film transistors
X ray crystallography
title Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
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