E-mode AlGaN/GaN HEMTs using p-NiO gates

Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the...

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Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2023-12, Vol.41 (6)
Main Authors: Chiang, Chao-Ching, Wan, Hsiao-Hsuan, Li, Jian-Sian, Ren, Fan, Yoo, Timothy Jinsoo, Kim, Honggyu, Pearton, S. J.
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cited_by cdi_FETCH-LOGICAL-c299t-720f91a8b6bf463ce2445d4d429c2b0b5c9a82afa9ed4e7889818397459d73953
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container_title Journal of vacuum science and technology. B, Nanotechnology & microelectronics
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Wan, Hsiao-Hsuan
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Pearton, S. J.
description Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from −0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 μm drain-source separation. The subthreshold swing decreased from 181 mV/dec for Schottky-gated HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO gates for e-mode AlGaN/GaN HEMT operation.
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title E-mode AlGaN/GaN HEMTs using p-NiO gates
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