Structural and magnetic properties of Ni cluster embedded (111)NiO layers grown on (0001)GaN films

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2024-03, Vol.42 (2)
• Main Authors: Arora, Simran, Yadav, Shivesh, Kaur, Amandeep, Sahu, Bhabani Prasad, Hussain, Zainab, Dhar, Subhabrata
• Format: Article
• Language: English
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/6.0003195

(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using the pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of techniques including high-resolution x-ray diffraction, precession-electron diffraction, and superconducting quantum interference device magnetometry. It has been found that Ni-clusters are formed in the NiO matrix only at sufficiently low oxygen pressures during the growth. The study further reveals that the orientation, shape, size, density, and magnetic properties of these clusters depend strongly on the growth temperature ( T G). Although most of the Ni-clusters are found to be obtained crystallographically aligned with the NiO matrix with Ni(111) ∥NiO(111), clusters with other orientations also exist, especially in samples grown at lower temperatures. The average size and density of the clusters increase with T G. The proportion of the Ni(111) ∥ NiO(111)-oriented clusters also improves as T G is increased. All cluster embedded films show ferromagnetic behavior even at room temperature. Easy-axis is found to be oriented in the layer plane in samples grown at relatively lower temperatures. However, it turns perpendicular to the layer plane for samples grown at sufficiently high temperatures. This reversal of easy-axis has been attributed to the size dependent competition between the shape and magnetoelastic and the surface anisotropies of the clusters. This composite material thus has great potential to serve as a spin-injector and spin-storage medium in GaN-based spintronics of the future.