Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2024-09, Vol.42 (5)
Main Authors: Patouillard, J., Bernard, M., Cadot, S., Gassilloud, R., Bernier, N., Grenier, A., Mantoux, A., Blanquet, E., Martin, F., Raynaud, C., Gianesello, F.
Format: Article
Language:English
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ISSN:0734-2101
1520-8559
DOI:10.1116/6.0003916