Optimization of the planar microcavity structure in bottom-emitting gallium nitride light-emitting diode

An optimized microcavity structure is proposed to enhance the emission efficiency of the bottom-emitting gallium nitride (GaN) light emitting diode. This structure contains a SiO2 layer below the n-GaN layer to enhance transmission through the bottom layer and a SiO2/Ag reflector coated on the p-GaN...

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Bibliographic Details
Published in:Optical engineering 2013-09, Vol.52 (9), p.091715-091715
Main Authors: Zhang, Haosu, Zhu, Jun, Jin, Guofan, Zhu, Zhendong
Format: Article
Language:English
Subjects:
Computational efficiency
Computing time
Gallium nitrides
Light-emitting diodes
Microcavities
Nitrides
Silicon dioxide
Silver
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Summary:An optimized microcavity structure is proposed to enhance the emission efficiency of the bottom-emitting gallium nitride (GaN) light emitting diode. This structure contains a SiO2 layer below the n-GaN layer to enhance transmission through the bottom layer and a SiO2/Ag reflector coated on the p-GaN layer to raise the reflection on the upper surface of the GaN layer. The thicknesses of the two SiO2 layers are optimized to improve the light extraction efficiency and internal quantum efficiency. The 200-nm-thick p-GaN layer signifies high current injection efficiency. The calculations reveal that the TM-polarized intensity in the normal direction from the optimized sample is about eight times stronger than that from the reference sample. Our designation offers the advantages of simplifying the fabricating process and reducing the manufacturing cost.
ISSN:0091-3286
1560-2303
DOI:10.1117/1.OE.52.9.091715