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Simulating semiconductor structures for next-generation optical inspection technologies
We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-d...
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Published in: | Optical engineering 2016-02, Vol.55 (2), p.025102-025102 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection. |
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ISSN: | 0091-3286 1560-2303 |
DOI: | 10.1117/1.OE.55.2.025102 |