Effect of partial crystallization on formation of amorphous marks

The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used...

Full description

Saved in:
Bibliographic Details
Main Authors: Nelson, Kenric P, Lopez, Orlando, Ruane, Michael F
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Magnetic and optical mass memories
Storage and reproduction of information
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used for the experiment. An 8% difference in reflectivity is measured between the amorphous marks formed in the fully crystallized, high reflectivity (R equals 43%) state and partially crystallized, low reflectivity (R equals 30%) state.
ISSN:0277-786X
DOI:10.1117/12.399350