Influence of Passivating SiOx Films on Porous Silicon Photoluminescence

The possibility of passivating the surface of photoluminescent porous silicon by thin SiO x films is studied. The influence of the passivating fi lm on the porous silicon photoluminescence spectra is investigated using luminescence, optical, and IR spectroscopy. It is shown that most of the IR absor...

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Bibliographic Details
Published in:Journal of applied spectroscopy 2016-03, Vol.83 (1), p.111-114
Main Authors: Olenych, I. B., Monastyrskii, L. S., Koman, B. P., Luchechko, A. P.
Format: Article
Language:English
Subjects:
Analytical Chemistry
Atomic/Molecular Structure and Spectra
Physics
Physics and Astronomy
Online Access:Get full text
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Summary:The possibility of passivating the surface of photoluminescent porous silicon by thin SiO x films is studied. The influence of the passivating fi lm on the porous silicon photoluminescence spectra is investigated using luminescence, optical, and IR spectroscopy. It is shown that most of the IR absorption bands of porous silicon structures correspond to molecular complexes containing hydrogen and oxygen. It is demonstrated that the SiO x films are transparent for the exciting light and for the light generated by the porous silicon and can be used to minimize degradation processes and to protect the porous layer from the environment.
ISSN:0021-9037
1573-8647
DOI:10.1007/s10812-016-0251-z