Cathodoluminescent investigations of InxGa1−xN layers

The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2008, Vol.19 (Suppl 1), p.319-323
Main Authors: Domracheva, Yana V., Jmerik, Valentin N., Popova, Tatiana B., Zamoryanskaya, Maria V.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Science
Optical and Electronic Materials
Online Access:Get full text
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Summary:The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by electron probe microanalysis, CL, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Some interesting peculiarities of CL spectra were obtained; the nature of the CL bands is discussed.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-008-9609-1