A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/AlxInyGa1-x-yN double quantum well laser diodes

The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Var...

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Bibliographic Details
Published in:Science China Technological Sciences 2011, Vol.54 (1), p.47-51
Main Authors: Ghazai, A. J., Thahab, S. M., Abu Hassan, H., Hassan, Z.
Format: Article
Language:English
Subjects:
Engineering
低阈值电流
双量子阱
摩尔分数
激光二极管
计算机辅助设计
运行参数
阈值电流密度
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Summary:The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.
ISSN:1674-7321
1869-1900
1862-281X
DOI:10.1007/s11431-010-4183-1