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C4N3BN Half-Metallic Monolayer with Persistent Magnetism: C4N3BN Half-Metallic Monolayer
The monolayer C 4 N 3 BN, short for s-triazine g- C 4 N 3 with B and pyrrolic N tailored at vacant sites, is investigated under in-plane strain, with a focus on its magnetism. Our density functional study shows that the half-metallic ground state and ferrimagnetic order persist up to considerable st...
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| Published in: | Journal of electronic materials 2025, Vol.54 (2), p.970-976 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 976 |
| container_issue | 2 |
| container_start_page | 970 |
| container_title | Journal of electronic materials |
| container_volume | 54 |
| creator | Tran, Minh-Tien Hoang, Trinh X. Nguyen, Huy-Viet Van Hy, Nguyen Duy, Tran Khanh Trong, Bui Duc Phong, Pham Nam |
| description | The monolayer
C
4
N
3
BN, short for s-triazine g-
C
4
N
3
with B and pyrrolic N tailored at vacant sites, is investigated under in-plane strain, with a focus on its magnetism. Our density functional study shows that the half-metallic ground state and ferrimagnetic order persist up to considerable strain from −7% to 10%, and temperatures as high as 900 K. At the critical uniaxial strain of approximately −9.30% and 10.90%, or symmetric biaxial strain of −7.62% and 17.38%, this ferrimagnetic half-metal turns into ferromagnetic semiconductors, all with the magnetization 1
μ
B
per unit cell. We present a simple explanation for that metamagnetism in the system by means of spin charge transfer and by counting its atomic valencies in the unit cell. Our finding adds to and enriches physicochemical understanding of the magnetism in carbon nitride-based half-metals. |
| doi_str_mv | 10.1007/s11664-024-11559-y |
| format | article |
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C
4
N
3
BN, short for s-triazine g-
C
4
N
3
with B and pyrrolic N tailored at vacant sites, is investigated under in-plane strain, with a focus on its magnetism. Our density functional study shows that the half-metallic ground state and ferrimagnetic order persist up to considerable strain from −7% to 10%, and temperatures as high as 900 K. At the critical uniaxial strain of approximately −9.30% and 10.90%, or symmetric biaxial strain of −7.62% and 17.38%, this ferrimagnetic half-metal turns into ferromagnetic semiconductors, all with the magnetization 1
μ
B
per unit cell. We present a simple explanation for that metamagnetism in the system by means of spin charge transfer and by counting its atomic valencies in the unit cell. Our finding adds to and enriches physicochemical understanding of the magnetism in carbon nitride-based half-metals.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-024-11559-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>7th International Symposium on Frontiers in Materials Science 2024 ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics and Microelectronics ; Energy Materials ; Energy Storage ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Solid State Physics ; Topical Collection: Frontiers in Materials Science 2024</subject><ispartof>Journal of electronic materials, 2025, Vol.54 (2), p.970-976</ispartof><rights>The Minerals, Metals & Materials Society 2024 Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-3367-5920</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tran, Minh-Tien</creatorcontrib><creatorcontrib>Hoang, Trinh X.</creatorcontrib><creatorcontrib>Nguyen, Huy-Viet</creatorcontrib><creatorcontrib>Van Hy, Nguyen</creatorcontrib><creatorcontrib>Duy, Tran Khanh</creatorcontrib><creatorcontrib>Trong, Bui Duc</creatorcontrib><creatorcontrib>Phong, Pham Nam</creatorcontrib><title>C4N3BN Half-Metallic Monolayer with Persistent Magnetism: C4N3BN Half-Metallic Monolayer</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>The monolayer
C
4
N
3
BN, short for s-triazine g-
C
4
N
3
with B and pyrrolic N tailored at vacant sites, is investigated under in-plane strain, with a focus on its magnetism. Our density functional study shows that the half-metallic ground state and ferrimagnetic order persist up to considerable strain from −7% to 10%, and temperatures as high as 900 K. At the critical uniaxial strain of approximately −9.30% and 10.90%, or symmetric biaxial strain of −7.62% and 17.38%, this ferrimagnetic half-metal turns into ferromagnetic semiconductors, all with the magnetization 1
μ
B
per unit cell. We present a simple explanation for that metamagnetism in the system by means of spin charge transfer and by counting its atomic valencies in the unit cell. Our finding adds to and enriches physicochemical understanding of the magnetism in carbon nitride-based half-metals.</description><subject>7th International Symposium on Frontiers in Materials Science 2024</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics and Microelectronics</subject><subject>Energy Materials</subject><subject>Energy Storage</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Solid State Physics</subject><subject>Topical Collection: Frontiers in Materials Science 2024</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2025</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqdzrsKwjAYhuEgCtbDDTjlBqL5m6bW1aK4tDg4uIUgaU2JqSQR6d1bD1fg9A0vHzwILYAugdL1ygOkaUJonBAAzjekG6AIeMIIZOl5iCLKUiA8ZnyMJt43lAKHDCKU5UnJtiU-SFORQgVpjL7gorWtkZ1y-KnDFR-V89oHZQMuZG1V0P42Q6NKGq_mv50itt-d8gPxd6dtrZxo2oezfRJAxRspvkjRI8UHKTr23-sFVGdFVQ</recordid><startdate>2025</startdate><enddate>2025</enddate><creator>Tran, Minh-Tien</creator><creator>Hoang, Trinh X.</creator><creator>Nguyen, Huy-Viet</creator><creator>Van Hy, Nguyen</creator><creator>Duy, Tran Khanh</creator><creator>Trong, Bui Duc</creator><creator>Phong, Pham Nam</creator><general>Springer US</general><scope/><orcidid>https://orcid.org/0000-0003-3367-5920</orcidid></search><sort><creationdate>2025</creationdate><title>C4N3BN Half-Metallic Monolayer with Persistent Magnetism</title><author>Tran, Minh-Tien ; Hoang, Trinh X. ; Nguyen, Huy-Viet ; Van Hy, Nguyen ; Duy, Tran Khanh ; Trong, Bui Duc ; Phong, Pham Nam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-springer_journals_10_1007_s11664_024_11559_y3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2025</creationdate><topic>7th International Symposium on Frontiers in Materials Science 2024</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics and Microelectronics</topic><topic>Energy Materials</topic><topic>Energy Storage</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Solid State Physics</topic><topic>Topical Collection: Frontiers in Materials Science 2024</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tran, Minh-Tien</creatorcontrib><creatorcontrib>Hoang, Trinh X.</creatorcontrib><creatorcontrib>Nguyen, Huy-Viet</creatorcontrib><creatorcontrib>Van Hy, Nguyen</creatorcontrib><creatorcontrib>Duy, Tran Khanh</creatorcontrib><creatorcontrib>Trong, Bui Duc</creatorcontrib><creatorcontrib>Phong, Pham Nam</creatorcontrib><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tran, Minh-Tien</au><au>Hoang, Trinh X.</au><au>Nguyen, Huy-Viet</au><au>Van Hy, Nguyen</au><au>Duy, Tran Khanh</au><au>Trong, Bui Duc</au><au>Phong, Pham Nam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>C4N3BN Half-Metallic Monolayer with Persistent Magnetism: C4N3BN Half-Metallic Monolayer</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2025</date><risdate>2025</risdate><volume>54</volume><issue>2</issue><spage>970</spage><epage>976</epage><pages>970-976</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>The monolayer
C
4
N
3
BN, short for s-triazine g-
C
4
N
3
with B and pyrrolic N tailored at vacant sites, is investigated under in-plane strain, with a focus on its magnetism. Our density functional study shows that the half-metallic ground state and ferrimagnetic order persist up to considerable strain from −7% to 10%, and temperatures as high as 900 K. At the critical uniaxial strain of approximately −9.30% and 10.90%, or symmetric biaxial strain of −7.62% and 17.38%, this ferrimagnetic half-metal turns into ferromagnetic semiconductors, all with the magnetization 1
μ
B
per unit cell. We present a simple explanation for that metamagnetism in the system by means of spin charge transfer and by counting its atomic valencies in the unit cell. Our finding adds to and enriches physicochemical understanding of the magnetism in carbon nitride-based half-metals.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-024-11559-y</doi><orcidid>https://orcid.org/0000-0003-3367-5920</orcidid></addata></record> |
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| ispartof | Journal of electronic materials, 2025, Vol.54 (2), p.970-976 |
| issn | 0361-5235 1543-186X |
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| subjects | 7th International Symposium on Frontiers in Materials Science 2024 Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Energy Materials Energy Storage Instrumentation Materials Science Optical and Electronic Materials Solid State Physics Topical Collection: Frontiers in Materials Science 2024 |
| title | C4N3BN Half-Metallic Monolayer with Persistent Magnetism: C4N3BN Half-Metallic Monolayer |
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