Influence of strain on hydrogenic impurity states in a GaN/AlxGa1−xN quantum dot

Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/Al x Ga 1− x N strained quantum dot, including the strong builtin electric field effect due to the spontaneous a...

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Bibliographic Details
Published in:Optoelectronics letters 2009-04, Vol.5 (2), p.85-88
Main Authors: Zhang, Bin, Yan, Zu-Wei
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Online Access:Get full text
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Summary:Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/Al x Ga 1− x N strained quantum dot, including the strong builtin electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very small with the Al content variety.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-009-8161-4