Effects of Mg doping content and annealing temperature on the structural properties of Zn1-xMgxO thin films prepared by radio-frequency magnetron sputtering

The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn 1- x Mg x O thin films. Here, using radio-frequency magnetron sputtering method, we prepared Zn 1- x Mg x O thin films on single crystalline Si(100) substrates with a series of x values. By...

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Bibliographic Details
Published in:Optoelectronics letters 2017, Vol.13 (1), p.42-44
Main Authors: Du, Wen-han, Yang, Jing-jing, Zhao, Yu, Xiong, Chao
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
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Summary:The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn 1- x Mg x O thin films. Here, using radio-frequency magnetron sputtering method, we prepared Zn 1- x Mg x O thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction (XRD) and scanning electron microscope (SEM), the crystalline structure and morphology of Zn 1- x Mg x O thin films with different x values are investigated. The crystalline structure of Zn 1- x Mg x O thin film is single phase with x 0.3, and hexagonal and cubic structures will coexist in Zn 1- x Mg x O thin films with higher x values. Especially with lower x values, a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn 1- x Mg x O thin film. The crystalline quality has been improved and the inner stress has been released, after the Zn 1- x Mg x O thin films were annealed at 600 °C in vacuum condition.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-017-6204-9