Single crystal X-ray analysis of the electronic structure of the thermoelectric material Sn1−xGexTe

The precise bonding and the electronic structure of the thermoelectric material Sn 1− x Ge x Te with two different doping levels viz. , x = 0.12 and x = 0.25 have been determined using single crystal X-ray data and maximum entropy method (MEM). The thermal vibration parameters of the individual atom...

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Bibliographic Details
Published in:Indian journal of physics 2010, Vol.84 (9), p.1203-1210
Main Authors: Charles Robert, M., Saravanan, R.
Format: Article
Language:English
Subjects:
Astrophysics and Astroparticles
Physics
Physics and Astronomy
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Summary:The precise bonding and the electronic structure of the thermoelectric material Sn 1− x Ge x Te with two different doping levels viz. , x = 0.12 and x = 0.25 have been determined using single crystal X-ray data and maximum entropy method (MEM). The thermal vibration parameters of the individual atoms in these two systems have also been studied and reported. The electron densities at the middle of the bond along [1 0 0] direction are found to be 0.346 e/Å 3 and 0.359 e/Å 3 for x = 0.12 and 0.25, respectively, showing different strengths of the bonding.
ISSN:0019-5480
0974-9845
DOI:10.1007/s12648-010-0115-y