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Influence of composition on structural, electrical and optical characterizations of Bi48−xSbxSe52 ternary chalcogenide system

Polycrystalline alloys of Bi 48− x Sb x Se 52 (where x  = 0.6, 25, 35 and 44 at.%) were prepared by direct monotemperature technique. The surface morphology, crystalline nature and compositional analysis were studied using scanning electron microscopy, X-ray diffraction (XRD) and energy dispersive X...

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Bibliographic Details
Published in:Indian journal of physics 2013, Vol.87 (12), p.1169-1175
Main Authors: Ammar, A. H., Abo Ghazala, M. S., Farag, A. A. M., Eleskandrany, A.
Format: Article
Language:English
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Summary:Polycrystalline alloys of Bi 48− x Sb x Se 52 (where x  = 0.6, 25, 35 and 44 at.%) were prepared by direct monotemperature technique. The surface morphology, crystalline nature and compositional analysis were studied using scanning electron microscopy, X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX), respectively. The XRD patterns recorded for the Bi 48− x Sb x Se 52 showed that these materials were polycrystalline in nature. Compositional analysis by EDX technique confirmed the nearly stoichiometric structure for the prepared alloys. The dielectric properties of the samples were investigated in the frequency range (10 2 –10 5  Hz). The optical measurements revealed that the Bi 48− x Sb x Se 52 alloys were direct band gap semiconductors. The activation energy and optical band gap were found to increase with increasing Sb concentration in Bi 48− x Sb x Se 52 .
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-013-0352-y