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Electronic structure and exchange interaction in Ga1–xMnxAs and In1–xMnxSb magnetic semiconductors
We have calculated the electronic structure of Ga 1– x Mn x As and In 1– x Mn x Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4 s and Mn 3 d orbitals are hybridized with the valence band of the host semiconductor. A new approach h...
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Published in: | Inorganic materials 2016, Vol.52 (2), p.89-93 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | We have calculated the electronic structure of Ga
1–
x
Mn
x
As and In
1–
x
Mn
x
Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4
s
and Mn 3
d
orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of
s
-electrons at a magnetic center due to single-center exchange
s
–
d
matrix elements. The magnitude of exchange interaction calculated using Hartree–Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data. |
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ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168516020175 |